Microsemi Corp. Bipolar Transistors - BJT Jan2N5581/TR

NPN silicon switching transistor for military and high-reliability applications, available in TO-206AB package, operating and storage junction temperature range from -55°C to +200°C. Collector-emitter voltage rated at 50 Vdc, collector-base voltage at 75 Vdc, and maximum collector current of 800 mAdc. Total power dissipation is 0.5 W at 25°C, derating linearly above that temperature. Forward current transfer ratio (hFE) ranges from 30 to 120 depending on collector current. Collector-emitter saturation voltage is specified up to 1.0 Vdc at 500 mA collector current. Qualified per MIL-PRF-19500/423 to JAN and JANTX levels.