Microsemi Corp. Bipolar Transistors - BJT Jan2N3019/TR

The JAN2N3019/TR is a military-qualified NPN silicon transistor in a TO-5 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V, with a maximum collector current of 1.0 A and power dissipation of 0.8 W at 25 °C. Thermal resistance is 195 °C/W junction-to-ambient and 30 °C/W junction-to-case. The device is hermetically sealed with a kovar base and nickel cap, and is RoHS compliant by design. It meets MIL-PRF-19500/391 qualification standards and features a forward current transfer ratio (hFE) ranging from 15 to 300, depending on operating conditions. Package dimensions follow standardized lead spacing and casing specifications for through-hole mounting.