Infineon Technologies AG Bipolar Transistor, General Purpose Transistor BC846PN

Description
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications
Request a Quote
Description
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

BC846PN is an NPN/PNP silicon bipolar transistor array in a SOT363 package, designed for audio frequency input stage and driver applications. It features two galvanically isolated transistors in one package, with a collector-emitter voltage rating of 65 V, collector current of 100 mA, and total power dissipation of 250 mW at ambient temperatures up to 115°C. The device has a junction temperature rating of 150°C and a thermal resistance from junction to soldering point of ≤140 K/W. It meets AEC-Q101 qualification standards and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

BC846PN is an NPN/PNP silicon bipolar transistor array in a SOT363 package, designed for audio frequency input stage and driver applications. It features two galvanically isolated transistors in one package, with a collector-emitter voltage rating of 65 V, collector current of 100 mA, and total power dissipation of 250 mW at ambient temperatures up to 115°C. The device has a junction temperature rating of 150°C and a thermal resistance from junction to soldering point of ≤140 K/W. It meets AEC-Q101 qualification standards and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor, General Purpose Transistor - BC846PN - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, General Purpose Transistor
BC846PN
Bipolar Transistor, General Purpose Transistor BC846PN
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications

NPN/PNP Silicon AF Transistor Arrays


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Two (galvanic) internal isolated NPN/PNP transistor in one package
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

Potential Applications

  • For AF input stage and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BC846PN
Product Name Bipolar Transistor, General Purpose Transistor
Polarity NPN/PNP (Dual); NPN; PNP
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
Unlock Full Specs
to access all available technical data