Microsemi Corp. IGBT Modules APTGT25X120T3G

The APTGT25X120T3G is a three-phase IGBT power module with a 1200 V collector-emitter voltage rating and 25 A continuous collector current at 80°C case temperature. It uses trench and field stop IGBT3 technology with a Kelvin emitter for simplified gate driving, operates up to 20 kHz, and features a direct-mount, isolated package with low thermal resistance. The module includes an internal NTC thermistor for temperature monitoring and has a junction-to-case thermal resistance of 0.8°C/W for the IGBT and 1.2°C/W for the diode. It is rated for a maximum junction temperature of 150°C, an isolation voltage of 4000 V RMS, and meets RoHS compliance. The package weighs 110 g and requires 2-3 N·m mounting torque to a heatsink.