IGBT, MODULE, 1400V, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:240W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.4kV
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 35A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
| Newark, An Avnet Company | Radwell International | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 76R7179 | 34552909 |
| Product Name | Igbt, Module, 1400V, 50A; Continuous Collector Current Fuji Electric | IGBT Module |
| PD | 240000 milliwatts |