DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 35A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
IGBT, MODULE, 1400V, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:240W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.4kV
| Radwell International | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 34552909 | 76R7179 |
| Product Name | IGBT Module | Igbt, Module, 1400V, 50A; Continuous Collector Current Fuji Electric |
| PD | 240000 milliwatts |
