Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT31M100B2 APT31M100B2

Manufacturer: Microsemi Corporation Win Source Part Number: 1146749-APT31M100B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Family Name: APT31M100B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 380 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): STW25N95K3; STWA20N95DK5; STW20N95DK5; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 30