Microsemi Corp. MOSFET APT30M40JVR

The APT30M40JVR is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications. It is packaged in an ISOTOP® (SOT-227) case and has a drain-source voltage rating of 300 V, a continuous drain current of 70 A at 25°C, and a maximum on-state resistance of 0.040 Ω at 10 V gate-source voltage. The device supports repetitive avalanche current up to 70 A with 50 mJ repetitive avalanche energy and 2500 mJ single-pulse avalanche energy. It features a gate-source voltage rating of ±30 V and a junction temperature range from -55°C to 150°C. The thermal resistance from junction to case is 0.28°C/W, and the package provides 2500 V RMS isolation from the mounting base. The device is UL recognized and meets AEC-Q200 qualifications.