Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L APT22F120L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L - 051443-APT22F120L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L
051443-APT22F120L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L 051443-APT22F120L
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051443-APT22F120L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264 [L]
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 8370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 051443-APT22F120L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L
Polarity N-Channel; N-Channel
V(BR)DSS 1200 volts
PD 1.04E6 milliwatts
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