Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L APT22F120L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L - 051443-APT22F120L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L
051443-APT22F120L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L 051443-APT22F120L
Manufacturer: Microsemi Corporation Win Source Part Number: 051443-APT22F120L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 [L] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 8370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051443-APT22F120L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264 [L]
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 8370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 051443-APT22F120L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT22F120L
Polarity N-Channel; N-Channel
V(BR)DSS 1200 volts
PD 1.04E6 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR - ALD310704ASCL - Advanced Linear Devices, Inc.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS -8 volts
View Details
4 suppliers
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E - BUK7J1R4-40HX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 190000 milliamps
View Details
8 suppliers
MOSFETs - 2222833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Package Type SOT323; SOT-323
View Details