Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12M80B APT12M80B

Manufacturer: Microsemi Corporation Win Source Part Number: 1146612-APT12M80B Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Family Name: APT12M80B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2470pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 335W (Tc) Rds On (Maximum) @ Id, Vgs: 800 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): IXFH12N80P; STW9NC80Z; STW9N80K5; Introduction Date: November 15, 2007 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited