Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT11N80BC3G APT11N80BC3G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768663-APT11N80BC3G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: APT11N80BC3G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 3.9V @ 680μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1585pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 156W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): SPW11N80C3FKSA1; SPW11N80C3XK; SPW11N80C3CKSA1; SPW11N80C3; Introduction Date: April 27, 2004 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768663-APT11N80BC3G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: APT11N80BC3G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 3.9V @ 680μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1585pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 156W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): SPW11N80C3FKSA1; SPW11N80C3XK; SPW11N80C3CKSA1; SPW11N80C3; Introduction Date: April 27, 2004 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT11N80BC3G - 768663-APT11N80BC3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT11N80BC3G
768663-APT11N80BC3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT11N80BC3G 768663-APT11N80BC3G
Manufacturer: Microsemi Corporation Win Source Part Number: 768663-APT11N80BC3G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: APT11N80BC3G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 3.9V @ 680μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1585pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 156W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): SPW11N80C3FKSA1; SPW11N80C3XK; SPW11N80C3CKSA1; SPW11N80C3; Introduction Date: April 27, 2004 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768663-APT11N80BC3G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Family Name: APT11N80BC3G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247 [B]
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 3.9V @ 680μA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1585pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 156W (Tc)
Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
Alternative Parts (Cross-Reference): SPW11N80C3FKSA1; SPW11N80C3XK; SPW11N80C3CKSA1; SPW11N80C3;
Introduction Date: April 27, 2004
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768663-APT11N80BC3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT11N80BC3G
PD 156000 milliwatts
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