Microsemi Corp. MOSFET APT10078BLLG

The APT10078BLLG is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications, featuring a 1000V drain-source voltage rating and a continuous drain current of 14A at 25°C. It is packaged in a TO-247 case with a maximum power dissipation of 403W and a junction-to-case thermal impedance of 0.31°C/W. The device has a typical on-state resistance of 0.780Ω at 10V gate-source voltage and 7A drain current, with a gate threshold voltage ranging from 3 to 5V. It meets RoHS standards and is suitable for applications requiring low conduction and switching losses, with a repetitive avalanche energy rating of 30mJ and single-pulse avalanche energy of 1300mJ. The operating junction temperature range is -55°C to 150°C.