100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET 8-VSONP -55 to 150
N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
MOSFET N-CH 100V 100A 8VSON
NexFET MOSFET N-Ch 100A 100V VSON-FET8EP
NexFET MOSFET N-Ch 100A 100V VSON-FET8EP
NexFET MOSFET N-Ch 100A 100V VSON-FET8EP
Manufacturer: Texas Instruments
Win Source Part Number: 771884-CSD19531Q5AT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Family Name: CSD19531Q5A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: 8-VSON (5x6)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3870pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.3W (Ta), 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.4 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): STL115N10F7AG; STL90N10F7; STL92N10F7AG; SiR104DP-T1-RE3;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
MOSFET, N-CHANNEL, 100V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power RoHS Compliant: Yes
MOSFET 100V,5.3mOhm,NexFET Power MOSFET
MOSFET N-CH 100V 100A 8VSON
| Texas Instruments | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD19531Q5AT | 296-37749-1-ND | CSD19531Q5AT | 8239259 | 8239259P | 771884-CSD19531Q5AT | 28AH2104 | CSD19531Q5AT | CSD19531Q5AT |
| Product Name | CSD19531Q5A 100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531Q5AT | Mosfet, N-Channel, 100V, 100A, Vson-8; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 100000 milliamps | 100000 milliamps | 110000 milliamps | 110000 milliamps | 100000 milliamps | ||||
| QG | 37 nC | ||||||||
| Package Type | SON5x6 | 8-PowerTDFN | 8-PowerTDFN | VSONP | VSON | SOT3 | TO-3 | 8-PowerTDFN | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel |
