Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT1001R1BN APT1001R1BN

Manufacturer: Microsemi Corporation Win Source Part Number: 224187-APT1001R1BN Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 2950pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited