Texas Instruments TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4 TPS1100DRG4

Description
Manufacturer: Texas Instruments Win Source Part Number: 213295-TPS1100DRG4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 791mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.45nC @ 10V Maximum Gate-Source Voltage: +2V, -15V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Texas Instruments Win Source Part Number: 213295-TPS1100DRG4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 791mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.45nC @ 10V Maximum Gate-Source Voltage: +2V, -15V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4 - 213295-TPS1100DRG4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4
213295-TPS1100DRG4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4 213295-TPS1100DRG4
Manufacturer: Texas Instruments Win Source Part Number: 213295-TPS1100DRG4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 791mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.45nC @ 10V Maximum Gate-Source Voltage: +2V, -15V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 213295-TPS1100DRG4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 213295-TPS1100DRG4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4
Polarity P-Channel; P-Channel
V(BR)DSS 15 volts
PD 791 milliwatts
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