Microsemi Corp. FETs - Single - 2N6798 2N6798

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124203-2N6798 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.semelab.co.uk Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 400mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 5.29nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124203-2N6798 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.semelab.co.uk Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 400mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 5.29nC at 10V Gate Source Voltage (Maximum): ±20V
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Suppliers

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FETs - Single - 2N6798 - 1124203-2N6798 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2N6798
1124203-2N6798
FETs - Single - 2N6798 1124203-2N6798
Manufacturer: Microsemi Corporation Win Source Part Number: 1124203-2N6798 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.semelab.co.uk Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 400mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 5.29nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124203-2N6798
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.semelab.co.uk
Manufacturer Package: TO-205AF Metal Can
Power Dissipation (Maximum): 800mW, 25W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.5A
Rds On (Maximum) at Id, Vgs: 400mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 5.29nC at 10V
Gate Source Voltage (Maximum): ±20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6798 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6798
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6798
MOSFET N-CH 200V 5.5A TO39

MOSFET N-CH 200V 5.5A TO39

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors RF Transistors
Product Number 1124203-2N6798 2N6798
Product Name FETs - Single - 2N6798 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
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