Microsemi Corp. JFET 2N5115e3

Description
JFET JFETs
Description
JFET JFETs
Datasheet
Datasheet Summary
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The 2N5115e3 is a P-channel JFET in a TO-18 (TO-206AA) package, with a hermetically sealed nickel-plated Kovar case and gold-plated terminals. It has a maximum drain-source voltage of 30 V, a gate-source voltage of 30 V, and a steady-state power dissipation of 0.500 W at 25°C. The device has a drain-source "on" state voltage of -0.8 V at -7.0 mA, a zero gate voltage drain current of 15 to 60 mA, and a gate-source cutoff voltage of 3.0 to 6.0 V. Its small-signal drain-source resistance is 100 Ω at 1.0 mA, and it has an input capacitance of 25 pF. The part is RoHS compliant and meets MIL-PRF-19500 screening requirements. The package weighs approximately 0.3 grams and operates from -65°C to +200°C.

Datasheet Summary
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The 2N5115e3 is a P-channel JFET in a TO-18 (TO-206AA) package, with a hermetically sealed nickel-plated Kovar case and gold-plated terminals. It has a maximum drain-source voltage of 30 V, a gate-source voltage of 30 V, and a steady-state power dissipation of 0.500 W at 25°C. The device has a drain-source "on" state voltage of -0.8 V at -7.0 mA, a zero gate voltage drain current of 15 to 60 mA, and a gate-source cutoff voltage of 3.0 to 6.0 V. Its small-signal drain-source resistance is 100 Ω at 1.0 mA, and it has an input capacitance of 25 pF. The part is RoHS compliant and meets MIL-PRF-19500 screening requirements. The package weighs approximately 0.3 grams and operates from -65°C to +200°C.

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N5115e3
Product Name JFET
Transistor Type JFET
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