Microsemi Corp. Bipolar Transistors - BJT 2N5003

The 2N5003 is a PNP silicon power transistor designed for fast switching applications, rated for a continuous collector current of 5.0 A, a collector-emitter voltage of 80 V, and a collector-base voltage of 100 V. It is housed in a TO-59 isolated package with a 180-degree lead orientation. The transistor has a thermal resistance junction-to-case of 3.0 °C/W and a maximum junction temperature of +200 °C. It is military qualified to JAN, JANTX, and JANTXV levels per MIL-PRF-19500/535, with ESD protection rated Class 3B per MIL-STD-750 Method 1020. Switching times include a 0.5 µs turn-on time and 0.5 µs fall time. The current gain (hFE) ranges from 20 to 90 depending on operating conditions.