Infineon Technologies AG Bipolar Transistors - BJT BC 847BL3 E6327

Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
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NPN silicon AF transistor for audio input stages and driver applications, housed in a TSLP-3-1 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, total power dissipation of 250 mW at junction temperatures up to 135 °C, and transition frequency of 250 MHz. It meets AEC-Q101 qualification except for the BC847BL3 variant, which is not qualified. RoHS compliant.

Datasheet Summary
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NPN silicon AF transistor for audio input stages and driver applications, housed in a TSLP-3-1 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, total power dissipation of 250 mW at junction temperatures up to 135 °C, and transition frequency of 250 MHz. It meets AEC-Q101 qualification except for the BC847BL3 variant, which is not qualified. RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 847BL3 E6327
Bipolar Transistors - BJT BC 847BL3 E6327
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 847BL3 E6327
Product Name Bipolar Transistors - BJT
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