Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3499 2N3499

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123731-2N3499 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 10μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 600mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 1W
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123731-2N3499 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 10μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 600mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 1W
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TRANSISTORS - Transistors (BJT) - Single - 2N3499 - 1123731-2N3499 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3499
1123731-2N3499
TRANSISTORS - Transistors (BJT) - Single - 2N3499 1123731-2N3499
Manufacturer: Microsemi Corporation Win Source Part Number: 1123731-2N3499 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 10μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 600mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 1W

Manufacturer: Microsemi Corporation
Win Source Part Number: 1123731-2N3499
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39 (TO-205AD)
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.semicoa.com/
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 10μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 600mV at 30mA, 300mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V
Maximum Power: 1W

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1123731-2N3499
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3499
Polarity NPN
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