Microsemi Corp. Bipolar Transistors - BJT 2N1890

The 2N1890 is an NPN silicon transistor qualified to MIL-PRF-19500/225 with a TO-5 package. It has a collector-base voltage rating of 100 Vdc, a collector-emitter voltage rating of 80 Vdc, and a maximum collector current of 500 mAdc. The device dissipates up to 0.8 W at +25°C with linear derating of 4.57 mW/°C for higher temperatures. The forward current transfer ratio ranges from 100 to 300 at 150 mA and 10 V collector-emitter voltage, and the collector-emitter saturation voltage is 5.0 V at 150 mA collector current and 15 mA base current. The operating and storage junction temperature range is -65°C to +200°C.