Micropac Industries, Inc. Mii Optocoupler JTX4N23A

A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A, and 4N24A differ from the 4N22, 4N23, and 4N24 only in that the collector of the transistor is isolated from the case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500/486 • Collector is electrically isolated from the case • Overall current gain: 1.5 typical (4N24A) • Base lead provided for conventional transistor biasing • Rugged package • High gain, high voltage transistor • +1kV electrical isolation