Micron Technology, Inc. Memory NAND04GR3B2DN6E

Description
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
  • Memory - NAND04GR3B2DN6E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - NAND04GR3B2DN6E - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND04GR3B2DN6E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NAND04GR3B2DN6E
Memory NAND04GR3B2DN6E
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Buy Now Datasheet
Memory - NAND04GR3B2DN6E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NAND04GR3B2DN6E
Memory NAND04GR3B2DN6E
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NAND04GR3B2DN6E NAND04GR3B2DN6E
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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