Micron Technology, Inc. Memory NAND04GR3B2DN6E

Description
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND04GR3B2DN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Buy Now Datasheet
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NAND04GR3B2DN6E NAND04GR3B2DN6E
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B CMOS 4-Bit-by-16-Word FIFO Register - CD40105BE - Texas Instruments
Specs
Memory Category FIFO
Package Type PDIP,SO,TSSOP
View Details
5 suppliers
Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details