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Micron Technology, Inc. Memory NAND04GR3B2DN6E

Description

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Memory - NAND04GR3B2DN6E - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
NAND04GR3B2DN6E

Memory NAND04GR3B2DN6E

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

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Datasheet

Memory - NAND04GR3B2DN6E - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
NAND04GR3B2DN6E

Memory NAND04GR3B2DN6E

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	NAND04GR3B2DN6E	NAND04GR3B2DN6E
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	25 ns	25 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

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