Home

Products & Services

Engineering News

Standards

Webinars

Engineering Forum

Micron Technology, Inc. Memory NAND04GR3B2DN6E

Description

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Memory - NAND04GR3B2DN6E - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
NAND04GR3B2DN6E

Memory NAND04GR3B2DN6E

FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

Buy Now

Datasheet

Memory - NAND04GR3B2DN6E - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
NAND04GR3B2DN6E

Memory NAND04GR3B2DN6E

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	NAND04GR3B2DN6E	NAND04GR3B2DN6E
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	25 ns	25 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

Unlock Full Specs

to access all available technical data

Similar Products

Memory - AS4DDR232M72A - Micross Components, Inc.

Micross Components, Inc.

Specs

Memory Category DDR2

Operating Temperature -55 to 125 C (-67 to 257 F)

Density 256000 kbits

Memories - NOR flash - Serial NOR flash - Quad SPI Flash - S25FL064LABNFB013 - S25FL064LABNFB013 - Infineon Technologies AG

Infineon Technologies AG

Memories - NOR flash - Serial NOR flash - Quad SPI Flash - S25FL064LABNFB013

S25FL064LABNFB013

Specs

Memory Category Flash

Operating Temperature -40 to 105 C (-40 to 221 F)

Density 64000 kbits

5 suppliers

Flash Memory - 1882523 - RS Components, Ltd.

RS Components, Ltd.

Specs

Memory Category Flash

Bits per Word 8 bits

Pins 8

Memory - 27C512-25B/UC - Lingto Electronic Limited

Rochester Electronics

Specs

Memory Category EPROM; EPROM

Access Time 250 ns

Density 512 kbits