Infineon Technologies AG Memory 40060108-002

Description
IC FLASH NOR
  • Memory - 40060108-002 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - 40060108-002 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH NOR
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 40060108-002 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
40060108-002
Memory 40060108-002
IC FLASH NOR

IC FLASH NOR

Supplier's Site Datasheet
Memory - 40060108-002 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
40060108-002
Memory 40060108-002
Memory IC

Memory IC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 40060108-002 40060108-002
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C256-17/J - Lingto Electronic Limited
Rochester Electronics
Memory
27C256-17/J
Specs
Memory Category EPROM; EPROM
Access Time 170 ns
Density 256 kbits
View Details
Memory - 5962-9232406MYA - Lingto Electronic Limited
Infineon Technologies AG
Memory
5962-9232406MYA
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 35 ns
Density 64 kbits
View Details
2 suppliers
Flash Memory - 1882679 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882679
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS29F010
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details