Micron Technology, Inc. Memory - SDRAM - MT49H32M9SJ-25:B MT49H32M9SJ-25:B

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting Style: SMD Technology: DRAM Memory Type: Volatile Memory Size: 288Mb (32M x 9) Access Time: 20ns Categories: Integrated Circuits Supplier Device Package: 144-FBGA (18.5x11) Status: Obsolete Temperature Range - Operating: 0°C ~ 95°C Memory Format: DRAM Clock Frequency: 400MHz Memory Interface: Parallel Manufacturer Package: 144-TFBGA Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,120 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting Style: SMD Technology: DRAM Memory Type: Volatile Memory Size: 288Mb (32M x 9) Access Time: 20ns Categories: Integrated Circuits Supplier Device Package: 144-FBGA (18.5x11) Status: Obsolete Temperature Range - Operating: 0°C ~ 95°C Memory Format: DRAM Clock Frequency: 400MHz Memory Interface: Parallel Manufacturer Package: 144-TFBGA Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,120 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT49H32M9SJ-25:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT49H32M9SJ-25:B
Memory - SDRAM - MT49H32M9SJ-25:B
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting Style: SMD Technology: DRAM Memory Type: Volatile Memory Size: 288Mb (32M x 9) Access Time: 20ns Categories: Integrated Circuits Supplier Device Package: 144-FBGA (18.5x11) Status: Obsolete Temperature Range - Operating: 0°C ~ 95°C Memory Format: DRAM Clock Frequency: 400MHz Memory Interface: Parallel Manufacturer Package: 144-TFBGA Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,120 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: DRAM
Memory Type: Volatile
Memory Size: 288Mb (32M x 9)
Access Time: 20ns
Categories: Integrated Circuits
Supplier Device Package: 144-FBGA (18.5x11)
Status: Obsolete
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Clock Frequency: 400MHz
Memory Interface: Parallel
Manufacturer Package: 144-TFBGA
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,120
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

Buy Now
Memory - MT49H32M9SJ-25:B-ND - DigiKey
Thief River Falls, MN, United States
DRAM Memory IC 288Mb (32M x 9) Parallel 400MHz 20ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mb (32M x 9) Parallel 400MHz 20ns 144-FBGA (18.5x11)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT49H32M9SJ-25:B - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT49H32M9SJ-25:B
Memory IC and Storage Component 774-MT49H32M9SJ-25:B
IC DRAM 288MBIT PARALLEL 144FBGA Product overview: MT49H32M9SJ-25:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H32M9SJ-25:B can be used for catalog matching and distributor lookup.

IC DRAM 288MBIT PARALLEL 144FBGA Product overview: MT49H32M9SJ-25:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H32M9SJ-25:B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT49H32M9SJ-25:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H32M9SJ-25:B
Integrated Circuits (ICs) - Memory - Memory MT49H32M9SJ-25:B
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site
Memory - MT49H32M9SJ-25:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FBGA (18.5x11)

Buy Now Datasheet
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT49H32M9SJ-25:B-ND 774-MT49H32M9SJ-25:B MT49H32M9SJ-25:B MT49H32M9SJ-25:B MT49H32M9SJ-25:B
Product Name Memory - SDRAM - MT49H32M9SJ-25:B Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V Surface Mount 1.7V ~ 1.9V
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