Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 13.75ns
Family Name: MT41K512M8
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 95°C (TC)
Case / Package: 78-FBGA (9x10.5)
Supply Voltage - Operating: 1.283 V to 1.45 V
Memory Format: DRAM
Max Frequency: 800MHz
Alternative Parts (Cross-Reference): H5TC4G83AFR-H9J; AS4C512M8D3L-12BIN; H5TC4G83AFR-G7J;
Introduction Date: May 12, 2017
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
IC DRAM 4GBIT PARALLEL 78FBGA Product overview: MT41K512M8RH-125:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M8RH-125
SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 800MHz 13.75ns 78-FBGA (9x10.5)
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K512M8RH-125:E | MT41K512M8RH-125:E-ND | MT41K512M8RH-125:E | MT41K512M8RH-125:E | MT41K512M8RH-125:E | MT41K512M8RH-125:E | |
| Product Name | Memory - SDRAM - MT41K512M8RH-125:E | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | SDRAM - DDR3L; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Package Type | BGA; 78-FBGA (9x10.5) | BGA; Tray | 78-TFBGA | 78-TFBGA | BGA; 78-TFBGA | BGA |
