Infineon Technologies AG Memory 99326-E0496-B

Description
IC FLASH NOR
Datasheet
Description
IC FLASH NOR
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH NOR

IC FLASH NOR

Supplier's Site Datasheet
Memory - 99326-E0496-B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 99326-E0496-B 99326-E0496-B
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers
Memory - 71124S20YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details