Micron Technology, Inc. Memory MT29F512G08EMCBBJ5-10:B TR

Description
IC FLASH 512GBIT PARALLEL 100MHZ
  • Memory - MT29F512G08EMCBBJ5-10:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F512G08EMCBBJ5-10:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 512GBIT PARALLEL 100MHZ

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F512G08EMCBBJ5-10:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08EMCBBJ5-10:B TR
Memory MT29F512G08EMCBBJ5-10:B TR
IC FLASH 512GBIT PARALLEL 100MHZ

IC FLASH 512GBIT PARALLEL 100MHZ

Supplier's Site
Memory - MT29F512G08EMCBBJ5-10:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08EMCBBJ5-10:B TR
Memory MT29F512G08EMCBBJ5-10:B TR
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F512G08EMCBBJ5-10:B TR MT29F512G08EMCBBJ5-10:B TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
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