Micron Technology, Inc. Memory MT29F3T08EQCBBG2-37ES:B TR

Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)
  • Memory - MT29F3T08EQCBBG2-37ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F3T08EQCBBG2-37ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F3T08EQCBBG2-37ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F3T08EQCBBG2-37ES:B TR
Memory MT29F3T08EQCBBG2-37ES:B TR
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

Buy Now
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EQCBBG2-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EQCBBG2-37ES:B TR
IC FLASH 3TBIT PAR 272TBGA

IC FLASH 3TBIT PAR 272TBGA

Supplier's Site
Memory - MT29F3T08EQCBBG2-37ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F3T08EQCBBG2-37ES:B TR
Memory MT29F3T08EQCBBG2-37ES:B TR
IC FLASH 3TB PARALLEL 272TBGA

IC FLASH 3TB PARALLEL 272TBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EQCBBG2-37ES:B TR MT29F3T08EQCBBG2-37ES:B TR MT29F3T08EQCBBG2-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
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