Micron Technology, Inc. Memory MT29F3T08EQCBBG2-37ES:B TR

Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)
Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz 272-TBGA (14x18)

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EQCBBG2-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EQCBBG2-37ES:B TR
IC FLASH 3TBIT PAR 272TBGA

IC FLASH 3TBIT PAR 272TBGA

Supplier's Site
IC FLASH 3TB PARALLEL 272TBGA

IC FLASH 3TB PARALLEL 272TBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EQCBBG2-37ES:B TR MT29F3T08EQCBBG2-37ES:B TR MT29F3T08EQCBBG2-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882861P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 16-4369-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
 - SN74ACT7202LA35RJ - Rochester Electronics
Specs
Memory Category FIFO
Package Type PLCC; PLCC32
View Details
2 suppliers