Micron Technology, Inc. Memory MT29F256G08EECBBJ4-6:B TR

Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)
Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08EECBBJ4-6:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08EECBBJ4-6:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08EECBBJ4-6:B TR
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08EECBBJ4-6:B TR MT29F256G08EECBBJ4-6:B TR MT29F256G08EECBBJ4-6:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9232406MYA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - LE25FU406BMB-TLM-H - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 4000 kbits
View Details
Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Flash Memory - 1712192 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type SOIC
Pins 8
View Details