Micron Technology, Inc. Memory MT29F256G08EECBBJ4-6:B TR

Description
IC FLASH 256GBIT PAR 132VBGA
Description
IC FLASH 256GBIT PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08EECBBJ4-6:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08EECBBJ4-6:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08EECBBJ4-6:B TR
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08EECBBJ4-6:B TR MT29F256G08EECBBJ4-6:B TR MT29F256G08EECBBJ4-6:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882723 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details
Memory - 40060167 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers