The VP2450 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is available in TO-92 and SOT-89 packages, with maximum drain-to-source and drain-to-gate breakdown voltages of -500 V and a gate-to-source voltage rating of ±20 V. The device operates from -55°C to +150°C and features an integral source-drain diode, low on-state resistance (30 Ω at -10 V gate voltage), and a typical threshold voltage of -1.5 V to -3.5 V. It meets RoHS compliance and is characterized by high input impedance, low input capacitance (190 pF), and thermal stability without secondary breakdown. Thermal resistance is 132 °C/W for TO-92 and 133 °C/W for SOT-89.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP2450 |
| Product Name | -500V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
