The VP0104 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is housed in a TO-92 package and has a drain-to-source breakdown voltage of -40V, a maximum continuous drain current of -250mA, and an on-state drain-to-source resistance of up to 8.0Ω at -10V gate voltage. The device features an integral source-drain diode, thermal stability, and is RoHS compliant. Its thermal resistance is 132°C/W, and it operates from -55°C to +150°C.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0104 |
| Product Name | -40V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
