Microchip Technology, Inc. MOSFET VN2450N3-G P005

The VN2450N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 (SOT-89) package, designed for switching and amplifying applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. It has a drain-to-source breakdown voltage of 500 V, a static drain-to-source on-state resistance of up to 13 Ω at 10 V gate voltage, and an on-state drain current of 500 mA. The device features a gate threshold voltage ranging from 1.5 V to 4.0 V, low gate body leakage current of 100 nA at ±20 V, and operates over a temperature range of -55°C to +150°C. The package is RoHS compliant and marked with 'Green' packaging indicators.