Microchip Technology, Inc. MOSFET VN2450N3-G P002

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
Datasheet Summary
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The VN2450N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, rated for 500 V drain-to-source voltage and a maximum continuous drain current of 200 mA. It features a static drain-to-source on-state resistance of up to 13 Ω at 10 V gate-source voltage and 400 mA drain current, with a gate threshold voltage range of 1.5 to 4.0 V. The device is RoHS compliant and operates from -55°C to +150°C. It is designed for switching and amplifying applications requiring high input impedance and thermal stability.

Datasheet Summary
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The VN2450N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, rated for 500 V drain-to-source voltage and a maximum continuous drain current of 200 mA. It features a static drain-to-source on-state resistance of up to 13 Ω at 10 V gate-source voltage and 400 mA drain current, with a gate threshold voltage range of 1.5 to 4.0 V. The device is RoHS compliant and operates from -55°C to +150°C. It is designed for switching and amplifying applications requiring high input impedance and thermal stability.

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Sheung Wan, Hong Kong
MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN2450N3-G P002
Product Name MOSFET
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