The VN2110 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a TO-236AB (SOT-23) profile measuring 2.90mm × 1.30mm with a maximum height of 1.12mm. The device has a drain-to-source breakdown voltage of 100V, a static drain-to-source on-state resistance of 4.0Ω maximum at 10V gate voltage and 500mA drain current, and a gate threshold voltage range of 0.8V to 2.4V. It operates from -55°C to 150°C, is lead-free and RoHS compliant, and meets JEDEC TO-236AB standards. The device exhibits a positive temperature coefficient for RDS(ON), enabling safe paralleling, and is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN2110 |
| Product Name | 100V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
