The VN0109 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a TO-92 case, measuring 5.08 to 6.10 mm in length and 3.89 to 4.06 mm in width, with a pin spacing of 0.95 to 1.05 mm. The device has a drain-to-source breakdown voltage of 90 V, a maximum continuous drain current of 350 mA, and a static drain-to-source on-state resistance of 2.5 to 5.0 Ω at 10 V gate voltage. It features an integral source-drain diode, a gate-to-source voltage rating of ±20 V, and operates from -55°C to 150°C. The part is RoHS compliant and meets TO-92JEDEC standards. Thermal resistance is 132°C/W.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0109 |
| Product Name | 90V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
