TN5325N3-G P014 is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for low-threshold switching applications such as TTL/CMOS interfaces and battery-powered systems. It has a drain-to-source breakdown voltage of 250 V, a maximum on-state drain current of 0.8 A, and a gate threshold voltage ranging from 0.6 V to 2.0 V. The device exhibits an on-state resistance of up to 7.0 Ω at V_GS = 10 V and I_D = 1.0 A, with an input capacitance of 110 pF and fast switching speeds. Operating and storage temperatures range from -55°C to +150°C. The -G suffix indicates RoHS compliance.
MOSFET N-CH Enhancmnt Mode MOSFET
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN5325N3-G P014 |
| Product Name | MOSFET |
