Microchip Technology, Inc. MOSFET TN2640N3-G P013

The TN2640N3-G is an N-channel enhancement-mode DMOS FET in a 3-lead TO-92 package, designed for power switching and amplifying applications such as DC-DC converters, solid state relays, and analog switches. It features a maximum gate threshold voltage of 2.0 V, enabling direct logic-level drive without a level translator. The device has a breakdown voltage of 400 V, an on-resistance of 5.0 Ω, and an input capacitance of 225 pF, supporting fast switching with low power loss. It exhibits low input and output leakage for improved standby efficiency and is RoHS compliant. The package allows surface mount compatibility with a power dissipation of 2.5 W.