The TN2106 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplifying applications. It is available in 3-lead SOT-23 and 3-lead TO-92 packages, with the SOT-23 measuring 2.90×1.30×1.12mm and the TO-92 having a standard TO-92 footprint. The device features a 60V drain-to-source breakdown voltage, a gate threshold voltage range of 0.6V to 2V, and a static drain-to-source on-state resistance of 2.5Ω at 10V gate drive. It includes an integral source-drain diode with a forward voltage drop of 1.2V to 1.8V. The TN2106 operates over an ambient temperature range of -55°C to +150°C, has a thermal resistance of 203°C/W in SOT-23 and 132°C/W in TO-92, and meets RoHS standards for lead-free compliance.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2106 |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
