The TN0620 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, ideal for TTL and CMOS interfaces. It is offered in a 3-lead TO-92 package with a maximum drain-to-source breakdown voltage of 200 V, a gate threshold voltage of up to 1.6 V, and a typical on-state resistance of 4 Ω at 10 V gate drive and 500 mA drain current. The device features low input capacitance of 110 pF, fast switching speeds, and operates from -55°C to +150°C ambient temperature with a thermal resistance of 132 °C/W. It is Pb-free and RoHS-compliant.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0620 |
| Product Name | 200V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
