The TN0604 is a 40V N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, including TTL and CMOS logic interfaces. It is housed in a 3-lead TO-92 package with a thermal resistance of 132°C/W. The device has a maximum gate-to-source voltage of ±20V, a gate threshold voltage ranging from 0.6V to 1.6V at 25°C, and a static drain-to-source on-state resistance of 0.6Ω to 0.75Ω at 10V gate drive. It operates from -55°C to +150°C and meets RoHS compliance. Typical input capacitance is 140pF, and peak on-state drain current reaches 4.6A under pulsed conditions.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0604 |
| Product Name | 40V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
