Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G TN0104N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1110791-TN0104N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 1.6V @ 500μA Max Input Capacitance: 70pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G - 1110791-TN0104N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TN0104N3-G-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TN0104N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • D-Mosfet, N-Ch, 0.45A, 40V, To-92-3; Transistor Polarity Microchip - 55AC3996 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0104N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1110791-TN0104N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 1.6V @ 500μA Max Input Capacitance: 70pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G - 1110791-TN0104N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G
1110791-TN0104N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G 1110791-TN0104N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110791-TN0104N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 1.6V @ 500μA Max Input Capacitance: 70pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1110791-TN0104N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 450mA (Ta)
Gate-Source Threshold Voltage: 1.6V @ 500μA
Max Input Capacitance: 70pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - TN0104N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0104N3-G-ND
Single FETs, MOSFETs TN0104N3-G-ND
N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3

N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - TN0104N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TN0104N3-G
Single FETs, MOSFETs TN0104N3-G
MOSFET N-CH 40V 450MA TO92-3

MOSFET N-CH 40V 450MA TO92-3

Supplier's Site Datasheet
D-Mosfet, N-Ch, 0.45A, 40V, To-92-3; Transistor Polarity Microchip - 55AC3996 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.45A, 40V, To-92-3; Transistor Polarity Microchip
55AC3996
D-Mosfet, N-Ch, 0.45A, 40V, To-92-3; Transistor Polarity Microchip 55AC3996
D-MOSFET, N-CH, 0.45A, 40V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.45A, 40V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TN0104N3-G
MOSFET TN0104N3-G
MOSFET 40V 1.8Ohm

MOSFET 40V 1.8Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0104N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0104N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0104N3-G
MOSFET N-CH 40V 450MA TO92-3

MOSFET N-CH 40V 450MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1110791-TN0104N3-G TN0104N3-G-ND TN0104N3-G 55AC3996 TN0104N3-G TN0104N3-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N3-G Single FETs, MOSFETs Single FETs, MOSFETs D-Mosfet, N-Ch, 0.45A, 40V, To-92-3; Transistor Polarity Microchip MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
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