Microchip Technology, Inc. Wideband SP4T Switch low insertion loss SWITCH-SP4T

Description
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Description
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Datasheet
Datasheet Summary
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The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pHEMT monolithic microwave integrated circuit (MMIC) SP4T switch die. It features a compact die size of 1.1 mm × 1.2 mm × 0.1 mm, with RF ports internally matched to 50 Ω for easy integration into multi-chip modules. The switch provides a typical insertion loss of 1.6 dB and isolation exceeding 45 dB across the operating band, along with a fast switching time of 10 ns. It supports a maximum RF input power of 30 dBm, a P1dB of 28 dBm, and an IP3 of 46 dBm. Operating temperature ranges from -40 °C to 85 °C, and control voltages are specified as low -3 V to 0 V and high -5.0 V to -4.2 V. The device is designed for test instrumentation, military radar, electronic warfare, and general microwave applications.

Datasheet Summary
Powered by GS/AI

The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pHEMT monolithic microwave integrated circuit (MMIC) SP4T switch die. It features a compact die size of 1.1 mm × 1.2 mm × 0.1 mm, with RF ports internally matched to 50 Ω for easy integration into multi-chip modules. The switch provides a typical insertion loss of 1.6 dB and isolation exceeding 45 dB across the operating band, along with a fast switching time of 10 ns. It supports a maximum RF input power of 30 dBm, a P1dB of 28 dBm, and an IP3 of 46 dBm. Operating temperature ranges from -40 °C to 85 °C, and control voltages are specified as low -3 V to 0 V and high -5.0 V to -4.2 V. The device is designed for test instrumentation, military radar, electronic warfare, and general microwave applications.

Suppliers

Company
Product
Description
Supplier Links
Wideband SP4T Switch low insertion loss - SWITCH-SP4T - Microchip Technology, Inc.
Chandler, AZ, United States
Wideband SP4T Switch low insertion loss
SWITCH-SP4T
Wideband SP4T Switch low insertion loss SWITCH-SP4T
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications

Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies.
The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.

Additional Features

  • DC–8 GHz GaAs MMIC SP4T Switch
  • Non-reflective topology
  • Low insertion loss: <2 dB
  • High isolation: >45 dB
  • Fast switching: 10 ns
  • High Input P1dB: 28 dBm
  • High Input IP3: 46 dBm
  • Compact die size: 1.1 mm × 1.2 mm × 0.1 mm
  • The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number SWITCH-SP4T
Product Name Wideband SP4T Switch low insertion loss
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