Microchip Technology, Inc. Wideband SP4T Switch low insertion loss SWITCH-SP4T

Description
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Datasheet
Description
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Datasheet

Suppliers

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Product
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Wideband SP4T Switch low insertion loss - SWITCH-SP4T - Microchip Technology, Inc.
Chandler, AZ, United States
Wideband SP4T Switch low insertion loss
SWITCH-SP4T
Wideband SP4T Switch low insertion loss SWITCH-SP4T
Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies. The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V. Additional Features DC–8 GHz GaAs MMIC SP4T Switch Non-reflective topology Low insertion loss: <2 dB High isolation: >45 dB Fast switching: 10 ns High Input P1dB: 28 dBm High Input IP3: 46 dBm Compact die size: 1.1 mm × 1.2 mm × 0.1 mm The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications

Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process technologies.
The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
The MMS008PP3 device is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective GaAs pHEMT single-pole 4 throw (SP4T) MMIC switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.

Additional Features

  • DC–8 GHz GaAs MMIC SP4T Switch
  • Non-reflective topology
  • Low insertion loss: <2 dB
  • High isolation: >45 dB
  • Fast switching: 10 ns
  • High Input P1dB: 28 dBm
  • High Input IP3: 46 dBm
  • Compact die size: 1.1 mm × 1.2 mm × 0.1 mm
  • The MMS008AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number SWITCH-SP4T
Product Name Wideband SP4T Switch low insertion loss
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