The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.
Additional Features
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/0
40– 2.7-3.6V for SST39VF512/010/020/0
40
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 45 ns for SST39LF512/010/020/0
40– 55 ns for SST39LF020/040– 70 ns for SST39VF512/010/020/0
40
Latched Address and Data
Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
All devices are RoHS compliant
The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.
Additional Features
- Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
- Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040
- Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
- Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
- Sector-Erase Capability– Uniform 4 KByte sectors
- Fast Read Access Time:– 45 ns for SST39LF512/010/020/040– 55 ns for SST39LF020/040– 70 ns for SST39VF512/010/020/040
- Latched Address and Data
- Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040
- Automatic Write Timing– Internal VPP Generation
- End-of-Write Detection– Toggle Bit– Data# Polling
- CMOS I/O Compatibility
- JEDEC Standard– Flash EEPROM Pinouts and command sets
- Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
- All devices are RoHS compliant
