Infineon Technologies AG Memory 28270509 A

Description
Memory IC
  • Memory - 28270509 A - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - 28270509 A - Lingto Electronic Limited
    Lingto Electronic Limited
Description
Memory IC

Suppliers

Company
Product
Description
Supplier Links
Memory - 28270509 A - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
28270509 A
Memory 28270509 A
Memory IC

Memory IC

Buy Now
Memory - 28270509 A - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
28270509 A
Memory 28270509 A
IC GATE NOR

IC GATE NOR

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 28270509 A 28270509 A
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4013-10NL - Lingto Electronic Limited
Rochester Electronics
Logic - FIFOs Memory
67C4013-10NL
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Memory - Controllers - BQ2201PNG4 - Lingto Electronic Limited
Texas Instruments
Memory - Controllers
BQ2201PNG4
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 8-PDIP
View Details
2 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821503VXF - 5962R1821503VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821503VXF
5962R1821503VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details
Flash Memory - 1882828P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882828P
Specs
Memory Category Flash
Density 64000 kbits
Package Type USON
View Details