Microchip Technology, Inc. Memory SST25WF040BT-40E/SN

Description
FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC
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Description
FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The SST25WF040BT-40E/SN is a 4 Mbit SPI serial flash memory device from Lingto Electronic Limited, designed for low power consumption and high reliability. It operates with a single voltage supply ranging from 1.65V to 1.95V and supports SPI-compatible communication at clock frequencies up to 40 MHz. The device features dual input/output support for fast read operations and has a typical active read current of 4 mA, with standby and power-down mode currents of 7 ¬µA and 2 ¬µA, respectively. This memory device offers a high endurance of 100,000 write/erase cycles and data retention exceeding 20 years. It includes flexible erase capabilities with uniform 4 KByte sectors and 64 KByte overlay blocks, along with a page program mode of 256 bytes per page. Typical erase times are 400 ms for chip erase, 40 ms for sector erase, and 80 ms for block erase, while page programming takes approximately 0.8 ms for 256 bytes. The SST25WF040BT-40E/SN is available in an 8-lead SOIC package and is RoHS compliant, making it suitable for a variety of industrial applications with operating temperature ranges from -40¬8C to +125¬8C.

Datasheet Summary
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The SST25WF040BT-40E/SN is a 4 Mbit SPI serial flash memory device from Lingto Electronic Limited, designed for low power consumption and high reliability. It operates with a single voltage supply ranging from 1.65V to 1.95V and supports SPI-compatible communication at clock frequencies up to 40 MHz. The device features dual input/output support for fast read operations and has a typical active read current of 4 mA, with standby and power-down mode currents of 7 ¬µA and 2 ¬µA, respectively. This memory device offers a high endurance of 100,000 write/erase cycles and data retention exceeding 20 years. It includes flexible erase capabilities with uniform 4 KByte sectors and 64 KByte overlay blocks, along with a page program mode of 256 bytes per page. Typical erase times are 400 ms for chip erase, 40 ms for sector erase, and 80 ms for block erase, while page programming takes approximately 0.8 ms for 256 bytes. The SST25WF040BT-40E/SN is available in an 8-lead SOIC package and is RoHS compliant, making it suitable for a variety of industrial applications with operating temperature ranges from -40¬8C to +125¬8C.

Suppliers

Company
Product
Description
Supplier Links
Memory - SST25WF040BT-40E/SNTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC

FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - SST25WF040BT-40E/SN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
SST25WF040BT-40E/SN
Integrated Circuits (ICs) - Memory - Memory SST25WF040BT-40E/SN
IC FLASH 4MBIT SPI 40MHZ 8SOIC

IC FLASH 4MBIT SPI 40MHZ 8SOIC

Supplier's Site
IC FLASH 4MBIT SPI 40MHZ 8SOIC

IC FLASH 4MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet
Memory - SST25WF040BT-40E/SN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 4Mbit SPI 40 MHz 8-SOIC

FLASH Memory IC 4Mbit SPI 40 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number SST25WF040BT-40E/SNTR-ND SST25WF040BT-40E/SN SST25WF040BT-40E/SN SST25WF040BT-40E/SN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC; 8-SOIC (0.154\", 3.90mm Width)
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