Microchip Technology, Inc. 600V/Vienna phase leg/Si Mosfet modules MSCC60AM23C4AG-Module

Description
Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Vienna phase leg VDSS (V): 600 RDSon (mR) typ: 23 Current (A) Tc=80C: 81 Silicon type: Super Junction Mosfet Package: SP4
  • 600V/Vienna phase leg/Si Mosfet modules - MSCC60AM23C4AG-Module - Microchip Technology, Inc.
    Microchip Technology, Inc.
Datasheet
Description
Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Vienna phase leg VDSS (V): 600 RDSon (mR) typ: 23 Current (A) Tc=80C: 81 Silicon type: Super Junction Mosfet Package: SP4
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V/Vienna phase leg/Si Mosfet modules - MSCC60AM23C4AG-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
Chandler, AZ, United States
600V/Vienna phase leg/Si Mosfet modules
MSCC60AM23C4AG-Module
600V/Vienna phase leg/Si Mosfet modules MSCC60AM23C4AG-Module
Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Vienna phase leg VDSS (V): 600 RDSon (mR) typ: 23 Current (A) Tc=80C: 81 Silicon type: Super Junction Mosfet Package: SP4
  • Super junction MOSFET
  • Ultra low RDSon
  • Low Miller capacitance
  • Ultra low gate charge
  • Avalanche energy rated
  • Kelvin source for easy drive
  • Low stray inductance
  • Internal thermistor for temperature monitoring (optional)
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant

Additional Features

    • Configuration: Vienna phase leg
    • VDSS (V): 600
    • RDSon (mR) typ: 23
    • Current (A) Tc=80C: 81
    • Silicon type: Super Junction Mosfet
    • Package: SP4
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number MSCC60AM23C4AG-Module
Product Name 600V/Vienna phase leg/Si Mosfet modules
Technology MOSFET
Unlock Full Specs
to access all available technical data

Related Documents

Similar Products

Intelligent Power Modules (IPM) - IRSM836-025MA - Infineon Technologies AG
Infineon Technologies AG
Intelligent Power Modules (IPM)
IRSM836-025MA
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Source
Package QFN 12x12
View Details
IGBT Modules IPM - 7th-Gen X Series Model 6MBP250XDA065-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules IPM
7th-Gen X Series Model 6MBP250XDA065-50
Specs
Technology IGBT; Intelligent Power Module (IPM)
Package P630
Output Voltage 650 volts
View Details
1200V Non-Punch-Thru IGBT - IGBT-NPT-1200V - Microchip Technology, Inc.
Microchip Technology, Inc.
1200V Non-Punch-Thru IGBT
IGBT-NPT-1200V
Specs
Technology IGBT
Package SOT-227, TO-247, TO-247-MAX, TO-264, TO-264-MAX, TO-268
View Details
IGBT Modules - - Kyocera Corporation
Kyocera Corporation
IGBT Modules
Specs
Technology IGBT
View Details