Microchip Technology, Inc. N-Channel Radiation-Hardened MOSFET MRH25_Series

Description
Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID). The JANSR2N7593U3 device is designed for the following applications: • DC–DC converters • Motor control • Switch mode power supplies Additional Features Low RDS(on) Fast switching Single-event hardened Low gate charge Simple drive Ease of paralleling Hermetically sealed Surface-mount design Ceramic package Light Weight
Datasheet
Description
Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID). The JANSR2N7593U3 device is designed for the following applications: • DC–DC converters • Motor control • Switch mode power supplies Additional Features Low RDS(on) Fast switching Single-event hardened Low gate charge Simple drive Ease of paralleling Hermetically sealed Surface-mount design Ceramic package Light Weight
Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Radiation-Hardened MOSFET - MRH25_Series - Microchip Technology, Inc.
Chandler, AZ, United States
N-Channel Radiation-Hardened MOSFET
MRH25_Series
N-Channel Radiation-Hardened MOSFET MRH25_Series
Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID). The JANSR2N7593U3 device is designed for the following applications: • DC–DC converters • Motor control • Switch mode power supplies Additional Features Low RDS(on) Fast switching Single-event hardened Low gate charge Simple drive Ease of paralleling Hermetically sealed Surface-mount design Ceramic package Light Weight

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID).

The JANSR2N7593U3 device is designed for the following applications:

• DC–DC converters
• Motor control
• Switch mode power supplies

Additional Features

  • Low RDS(on)
  • Fast switching
  • Single-event hardened
  • Low gate charge
  • Simple drive
  • Ease of paralleling
  • Hermetically sealed
  • Surface-mount design
  • Ceramic package
  • Light Weight
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MRH25_Series
Product Name N-Channel Radiation-Hardened MOSFET
Polarity N-Channel
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