The MSC750SMA170B is a 1700 V, 750 mΩ silicon carbide N-channel power MOSFET in a TO-247 package, weighing 6.2 g. It operates with a maximum junction temperature of 175°C and has a drain-source on-resistance of 750 mΩ at 25°C. The device features low gate charge (11 nC), low input capacitance (184 pF), and fast switching performance with turn-on delay of 13 ns. It supports continuous drain current of 7 A at 25°C and includes a fast, reliable body diode, eliminating the need for an external freewheeling diode. The device is RoHS compliant and designed for high-efficiency applications such as PV inverters, EV chargers, and industrial motor drives.
MOSFET-SiC-1700V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MOSFET-SIC-1700V |
| Product Name | 1700V Silicon Carbide (SiC) MOSFET |
