PNP silicon dual transistor in TO-78-6 package, rated for 60 V collector-emitter and collector-base voltage, 50 mA collector current, and 350 mW total power dissipation at +25°C. Qualified to MIL-PRF-19500/336 with JANTV compliance. Features forward current gain (hFE) ranging from 150 to 450 at 1.0 mA collector current and 5.0 V collector-emitter voltage. Includes specifications for saturation voltages, input impedance, output admittance, capacitance, and noise figure under defined test conditions.
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 150-MNS2N3810U/TR-ND |
| Product Name | Bipolar Transistor Arrays |
| Polarity | PNP |
