Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2 AIKQ120N75CP2

Description
The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems. The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability. With 120A nominal current, the device is an easy drop-in solution for the AIKQ120N60CT bringing the unique EDT2 benefits to existing designs. Summary of Features VCE = 750 V 750 V collector-emitter blocking voltage capability Smooth switching characteristics Very low VCE(sat),1.30 V (typ.) Short circuit robust Very tight parameter distribution Low gate charge QG Co-packaged with fast soft recovery Emitter Controlled 3 diode Qualified according to AEC-Q101 Increase overvoltage margin in the application Reduction of number of paralleled devices required Simple gate drive design Self limiting current under short circuit condition Low EMI signature High reliability and operating lifetime Benefits Benchmark quality and switching performance for 470V Vdc systems This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc. Extremely robust design to fulfill customer’s mission profile High switching frequencies for less switching losses and cooling effort Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization Potential Applications Traction inverter DC Link Discharge Switch Auxiliary inverter Applications Automotive Automotive high-voltage e-compressor Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1 2 Other variants of this product family Product variant Driver support IC(nom) 100C° [A] VCESat [V] AIKQ200N75CP2 IGBT 200 1.30
  • Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2 - AIKQ120N75CP2 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems. The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability. With 120A nominal current, the device is an easy drop-in solution for the AIKQ120N60CT bringing the unique EDT2 benefits to existing designs. Summary of Features VCE = 750 V 750 V collector-emitter blocking voltage capability Smooth switching characteristics Very low VCE(sat),1.30 V (typ.) Short circuit robust Very tight parameter distribution Low gate charge QG Co-packaged with fast soft recovery Emitter Controlled 3 diode Qualified according to AEC-Q101 Increase overvoltage margin in the application Reduction of number of paralleled devices required Simple gate drive design Self limiting current under short circuit condition Low EMI signature High reliability and operating lifetime Benefits Benchmark quality and switching performance for 470V Vdc systems This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc. Extremely robust design to fulfill customer’s mission profile High switching frequencies for less switching losses and cooling effort Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization Potential Applications Traction inverter DC Link Discharge Switch Auxiliary inverter Applications Automotive Automotive high-voltage e-compressor Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1 2 Other variants of this product family Product variant Driver support IC(nom) 100C° [A] VCESat [V] AIKQ200N75CP2 IGBT 200 1.30
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AIKQ120N75CP2 is a 750 V EDT2 IGBT co-packed with a fast soft recovery diode in a TO-247PLUS-3 package, designed for automotive traction inverters and DC-link discharge applications. It supports a continuous collector current of 120 A at 100 °C and 150 A at 25 °C, with a collector-emitter saturation voltage of 1.3 V (typical) at 120 A and 25 °C. The device withstands short circuits for 5 µs at 470 V collector-emitter voltage and 15 V gate-emitter voltage, with self-limiting current behavior. Thermal resistance from junction to case is 0.17 to 0.22 K/W for the IGBT and 0.31 to 0.4 K/W for the diode. The part is qualified to AEC-Q101 for automotive applications and features low gate charge, smooth switching, and low EMI for simplified gate drive design.

Datasheet Summary
Powered by GS/AI

The AIKQ120N75CP2 is a 750 V EDT2 IGBT co-packed with a fast soft recovery diode in a TO-247PLUS-3 package, designed for automotive traction inverters and DC-link discharge applications. It supports a continuous collector current of 120 A at 100 °C and 150 A at 25 °C, with a collector-emitter saturation voltage of 1.3 V (typical) at 120 A and 25 °C. The device withstands short circuits for 5 µs at 470 V collector-emitter voltage and 15 V gate-emitter voltage, with self-limiting current behavior. Thermal resistance from junction to case is 0.17 to 0.22 K/W for the IGBT and 0.31 to 0.4 K/W for the diode. The part is qualified to AEC-Q101 for automotive applications and features low gate charge, smooth switching, and low EMI for simplified gate drive design.

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2 - AIKQ120N75CP2 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2
AIKQ120N75CP2
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2 AIKQ120N75CP2
The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems. The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability. With 120A nominal current, the device is an easy drop-in solution for the AIKQ120N60CT bringing the unique EDT2 benefits to existing designs. Summary of Features VCE = 750 V 750 V collector-emitter blocking voltage capability Smooth switching characteristics Very low VCE(sat),1.30 V (typ.) Short circuit robust Very tight parameter distribution Low gate charge QG Co-packaged with fast soft recovery Emitter Controlled 3 diode Qualified according to AEC-Q101 Increase overvoltage margin in the application Reduction of number of paralleled devices required Simple gate drive design Self limiting current under short circuit condition Low EMI signature High reliability and operating lifetime Benefits Benchmark quality and switching performance for 470V Vdc systems This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc. Extremely robust design to fulfill customer’s mission profile High switching frequencies for less switching losses and cooling effort Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization Potential Applications Traction inverter DC Link Discharge Switch Auxiliary inverter Applications Automotive Automotive high-voltage e-compressor Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1ED020I12-F2 | Gate driver ICs TLE7258SJ | Automotive LIN transceivers FM25CL64B-GTR | F-RAM (Ferroelectric RAM) SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC 1 2 Other variants of this product family Product variant Driver support IC(nom) 100C° [A] VCESat [V] AIKQ200N75CP2 IGBT 200 1.30

The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems.

The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability.

With 120A nominal current, the device is an easy drop-in solution for the AIKQ120N60CT bringing the unique EDT2 benefits to existing designs.


Summary of Features

  • VCE = 750 V
  • 750 V collector-emitter blocking voltage capability
  • Smooth switching characteristics
  • Very low VCE(sat),1.30 V (typ.)
  • Short circuit robust
  • Very tight parameter distribution
  • Low gate charge QG
  • Co-packaged with fast soft recovery Emitter Controlled 3 diode
  • Qualified according to AEC-Q101
  • Increase overvoltage margin in the application
  • Reduction of number of paralleled devices required
  • Simple gate drive design
  • Self limiting current under short circuit condition
  • Low EMI signature
  • High reliability and operating lifetime

Benefits

  • Benchmark quality and switching performance for 470V Vdc systems
  • This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc.
  • Extremely robust design to fulfill customer’s mission profile
  • High switching frequencies for less switching losses and cooling effort
  • Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization

Potential Applications

  • Traction inverter
  • DC Link Discharge Switch
  • Auxiliary inverter

Applications

  • Automotive
  • Automotive high-voltage e-compressor
  • Electric vehicle (EV) drivetrain system
  • EV traction inverter

Designers who used this product also designed with


  • FM25CL64B-GTR |
    F-RAM (Ferroelectric RAM)
  • SAK-TC275TC-64F200N DC |
    AURIX™ Family – TC27xT
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • 1ED020I12-F2 |
    Gate driver ICs
  • TLE7258SJ |
    Automotive LIN transceivers
  • FM25CL64B-GTR |
    F-RAM (Ferroelectric RAM)
  • SAK-TC275TC-64F200N DC |
    AURIX™ Family – TC27xT
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • 1ED020I12-F2 |
    Gate driver ICs
  • TLE7258SJ |
    Automotive LIN transceivers
  • FM25CL64B-GTR |
    F-RAM (Ferroelectric RAM)
  • SAK-TC275TC-64F200N DC |
    AURIX™ Family – TC27xT
  • TLF35584QVVS1 |
    OPTIREG™ PMIC

1
2

Other variants of this product family

Product variant

Driver support

IC(nom) 100C° [A]

VCESat [V]

AIKQ200N75CP2

IGBT 200 1.30

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKQ120N75CP2
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKQ120N75CP2
VCE(on) 750 volts
Switching Speed 7 to 15 kHz
tr 69 ns
tf 50 ns
Unlock Full Specs
to access all available technical data